profile
Dr. Dharmendra Singh Yadav
Assistant ProfessorDr. Dharmendra Singh Yadav received Ph.D. degree in VLSI Design Engineering from PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur Madhya Pradesh in April 2018. He received M.E degree in Electronics and Tele Communication from Shri Govindram Seksaria Institute of Technology and Science, Indore Madhya Pradesh in 2011 and B.E degree in Electronics and Communication Engineering from Samrat Ashok Technological Institute Vidisha Madhya Pradesh in 2009. He has qualified National level examination like GATE in Electronics and Communication Engineering. His research interest includes Low-power MOSFETs, Multigate MOSFET, Tunnel FET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, and Nanotechnology based thin film devices for sensing applications also FETs Based Biosensor Strain Analysis, Ferroelectrics Based FETs etc. He is also a peer reviewer and member of several reputed SCI journals/ conferences like IEEE and Scopus.
| Name | : | Dr. Dharmendra Singh Yadav |
| Designation | : | Assistant Professor |
| Department | : | Electronics & Communication Engineering |
| Qualification | : | B.E, M.E, Ph.D. |
| Phone | : | 01972 -254600 |
| Email ID | : | dsyadav@nith.ac.in |
| Google Scholar Link | : | View |
Resume Not Available..
General Information
| Name | : | Dr. Dharmendra Singh Yadav |
| Designation | : | Assistant Professor |
| Department | : | Electronics & Communication Engineering |
| Qualification | : | B.E, M.E, Ph.D. |
| Date of Birth | : | |
| Date of joining | : | 10/12/2018 |
Contact Details
| Phone | : | 01972 -254600 |
| Email ID | : | dsyadav@nith.ac.in |
Specialization
VLSI Design
Position Held
| Position | Department Name | Institute Name | Time Period |
|---|
Educational Qualification
| Name of the Degree | Year of Passing | Institute/University |
|---|---|---|
| B.E | 2009 | Samrat Ashok Technological Institute Vidisha M.P |
| M.E | 2011 | Shri Govindram Seksaria Institute of Technology and Science Indore M.P |
| Ph.D. (VLSI Design) | 2018 | PDPM Indian Institute of Information Technology, Design & Manufacturing Jabalpur M.P |
Honors & Recognitions Achieved
| Sr.No. | Title | Activity | Given By | Year |
|---|
Research Experience
| Research Interests : | Tunnel FET, Multigate MOSFET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, Low-power MOSFET and TFETs. | |
| Brief Research Statement : | Requirement of energy efficient transistor which supports for high frequency ultra low power application. Need of smaller off-currents and standby power dissipation. Need of lesser switching delay which improves circuit level performances. Reducing supply voltage (VDD) while keeping leakage current low is one of the major concern for minimizing energy consumption. The thermal limit of MOSFET sub threshold swing (SS) restricts lowering threshold voltage (Vt), causing significant performance degradation at low VDD. Need of scaling in devices with reduced gate leakage. |
Journal Publications
| Year | Author(s) | Title & Vol. No. | Journal Name | Indexing (SCI) Web of Science/Scopus |
|---|---|---|---|---|
| 2018 | D. S. Yadav, D. Sharma, S.Tirkey, D. G. sharma, S. Bajpai, D. Soni, S. Yadav, Mohd. Aslam and N. Sharma | Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications, doi: 10.1049/mnl.2018.5075 Accepted on 11 July. 2018 | IET, Micro Nano Letters | SCI |
| 2018 | D. S. Yadav, A. Verma, D. Sharma, and N. Sharma | Study of Metal Strip Insertion and its Optimization in Doping Less TFET. Vol. no. 122, pp. 577-586, Oct 2018 | Superlattices and Microstructures, Elsevier | SCI |
| 2018 | D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj | A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET vol. 17, Issue. 1, pp 118-128, Mar 2018 | Journal of Computational Electronics, Springer | SCI |
| 2017 | D. S. Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad | Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance vol. 111, pp. 123-133, Nov. 2017 | Superlattices and Microstructures, Elsevier | SCI |
| 2017 | D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj, | Performance investigation of hetero material (InAs/Si) based charge plasma TFET vol.12, no.6, pp.358–363, Jan. 2017 | IET, Micro Nano Letters | SCI |
| 2016 | D. S. Yadav, B. R. Raad, and D. Sharma | A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature,” vol. no. 100, pp. 266–273, Dec. 2016 | Superlattices and Microstructures, Elsevier | SCI |
| 2016 | D. S. Yadav, D. Sharma, B.R. Raad, V. Bajaj, | “Impactful Study of Dual Work Function, Underlap and Hetero Gate Dielectric on TFET with Different Drain Doping Profile for High Frequency Performance Estimation and Optimization,” vol. no. 96, pp. 36–46, Aug. 2016 | Superlattices and Microstructures, Elsevier | SCI |
| 2018 | S. Tirkey, D. Sharma, B. Raad, D. S. Yadav | A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field Effect Transistor" vol. 65, no.1, pp. 282-289, Jan. 2018. | IEEE Transaction on Electron Devices | SCI |
| 2017 | S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav | Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, vol. 63, no.9, pp. 3943-3950, Sep. 2017 | IEEE Transaction on Electron Devices | SCI |
| 2017 | M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav | Performance Assessment of a Novel Vertical Dielectrically Modulated TFET-Based Biosensor. vol. 63, no. 9, pp. 3841-3848, Sep. 2017 | IEEE Transaction on Electron Devices | SCI |
| 2016 | B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav | Drain work function engineered doping-Less charge plasma TFET for ambipolar suppression and RF performance improvement: A proposal design and investigation", vol. 63, no. 10, pp. 3950-3957, Oct. 2016 | IEEE Transaction on Electron Devices | SCI |
| 2016 | D. Singh, D. Sharma, S. Pandey, K. Nigam, D. S. Yadav and P. N. Kondekar | A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection. vol. 64, no. 1, pp. 271-278, Jan. 2016 | IEEE Transaction on Electron Devices | SCI |
| 2017 | S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav | Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance,” vol. no. 16, Issue. 3, pp 714- 720 Sep. 2017. | Journal of computational electronics Springer | SCI |
| 2016 | D. Sharma, B. R. Raad, D.S. Yadav, P. Kondekar, and K. Nigam | 2-D Potential, Electric Field and Drain Current Model of Source Pocket Hetero Gate Dielectric Triple Work Function Tunnel Field-Effect Transistor. vol. 12, no. 1, pp. 11-16, Sep. 2016 | IET, Micro Nano Letters | SCI |
| 2018 | A Lemtur, D Sharma, P Suman, J Patel, D S Yadav and N Sharma | Performance analysis of gate all around GaAsP/AlGaSb CPTFET,” vol. no. 117, pp. 364–372, Mar. 2018 | Superlattices and Microstructures, Elsevier | SCI |
| 2018 | S Gupta, D Sharma , D Soni , S Yadav ; M. Aslam , D S Yadav, K Nigam, N Sharma | Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability. Vol. no. 13 , Issue: 8 pp: 1192 - 1196, 2018 | IET, Micro Nano Letters | SCI |
| 2018 | M. Aslam, D Sharma, D Soni, S Yadav , B R Raad , D S Yadav , N Sharma | Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation. Year: 2018 , Vol. no. 13 , Issue: 10 pp 1480 - 1485, 2018 | IET, Micro Nano Letters | SCI |
| 2018 | S Tirkey, D S yadav, D Sharma | Controlling ambipolar current of dopingless tunnel field-effect transistor https://doi.org/10.1007/s00339-018-2237-6 | Applied Physics A, Springer | SCI |
| 2019 | D. Soni, A. K. Behra, D.Sharma, D.P.Samajdar, D.S.Yadav | Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing.Year: 2019 , Vol. no. 14 , Issue: 11 pp 1539-1547, 2019 | Journal of Nanoelectronics and Optoelectronics | SCI |
Conference Publications
| Year | Author(s) | Title | Conference name with place | Indexing (SCI/Web of science/Scopus) |
|---|---|---|---|---|
| 2018 | D. S. Yadav, D. Sharma, D. G. Sharma and S. Bajpai | High Frequency Analysis of GaAsP/InSb Hetero Junction Double Gate Tunnel Field Effect Transistor | IEEE’s 3rd International Conference for Convergence in Technology (I2CT), .sponsored by IEEE Bombay Section, held from 6th — 8th April, 2018, at Hotel Gateway (TAJ), Hinjewadi, Pune, Maharashtra , India | SCI |
| 2017 | D. S. Yadav, D. Sharma, S. Tirkey, D. Soni, D. G. Sharma and S. Bajpai | A Comparative Study of GaP/SiGe heterojunction double gate Tunnel Field Effect Transistor | IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS- 2017), held from18th —20th Dec, 2017, at OIST Bhopal, India. | SCI |
| 2017 | D. Soni, D. Sharma, S. Yadav, Mohd. Aslam and D. S. Yadav | Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor | IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS-2017), held from 18th—20th Dec, 2017, at OIST Bhopal, India | SCI |
| 2017 | D. S. Yadav, D. Sharma, R. Agrawal, G. Prajapati, S. Tirkey, B. R. Raad, and V. Bajaj | Temperature based performance analysis of doping-less Tunnel Field Effect Transistor | IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India | SCI |
| 2017 | S. Tirkey, D. S. Yadav, D. Sharma and V. Bajaj | Controlling Ambipolar Behavior and Improving Radio Frequency Performance of Hetero Junction Double Gate TFET by Dual Work-Function, Hetero Gate Dielectric, Gate Underlap: Assessment and Optimization | IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India. | SCI |
| 2016 | D. S. Yadav, D. Sharma, B. R. Raad and V. Bajaj | Dual Workfunction Hetero Gate Dielectric Tunnel Field-Effect Transistor Performance Analysis | IEEE international conference on advanced communication control and computing technologies (ICACCT 2016) organized by Syed Ammal Engineering College held from 25th -27th May,2016, at Ramanathapuram, Tamilnadu, India | SCI |
| 2012 | D. S. Yadav et. al | Performance evaluation of WRAN physical layer with modulation | Emanthan-2012 organized by department of Electronics communication & instrumentation held at SR group of institution Jhansi (U.P), India held from 6th -7th Apr. 2012, pp. 289- 292, ISBN NO. 93-82062-18-1. | web |
| 2011 | D. S. Yadav, A. Jain, and A. Naik | Performance Evaluation of MIMO-OFDM system | Nanoscience Engineering & Advanced Computing (ICNEAC-2011) Organized by: IACQER Advanced Research Laboratory for Nano materials & Devices, held at Swarnandhara College of engineering and technology, Narsapur (A.P) held from 8th -10th Jul. 2011, Vol. no. 01, PP.438-441 ISBN NO. 978-81-8465-683-1. | web |
| 2011 | D. S. Yadav, A. Jain, and A. Naik | Performance Evaluation of OFDM system using BPSK modulation | Issues and challenges in networking intelligence and computing technologies (ICNICT-2011) held at Krishna college Ghaziabad (U.P) held from 1st -2nd Sept. 2011, Vol. no. 01, pp. 817-820, ISBN NO. 978-93-81126-21-1 | web |
| 2012 | D. S. Yadav et. al | IEEE 802.22 wireless regional area networks | Prestige Abhigyan 2012- National Level Students' Paper Presentation Competition" under the aegis of Prestige-ISTE Chapter and Prestige–Indian Society for Technical Education (ISTE) Students Chapter, held at Prestige institute of engineering & science Indore (M.P) on 17th March 2012. | web |
| 2011 | D. S. Yadav et. al | MIMO-OFDM system-A review | signal processing and embedded systems applications (SPESA-2011) held at CMR college of engineering Hyderabad (A.P) on 8th -10th July 2011, Vol. no. 01, pp.158-163, ISBN NO 978-93- 81075-46-3. | web |
| 2011 | D. S. Yadav et. al | OFDM system –A review | National Conference on Recent Trends in Electronics & Communication Technology (ECOMM-2011) held at SD- Bansal, Indore (M.P) on 8th -9th April, 2011. | web |
| 2020 | N. Parmar ; Dharmendra Singh Yadav ; S. Kumar ; R. Sharma ; S. Saraswat ; A. Kumar | Performance Analysis of a Novel Dual Metal Strip Charge Plasma Tunnel FET | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | web |
| 2020 | S. Saraswat ; Dharmendra Singh Yadav ; S. Kumar ; N. Parmar ; R. Sharma ; Atul Kumar | Performance Analysis of TMG FinFETs for Low Power Application with Improved Analog/RF Characteristics | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | web |
| 2020 | Ritwik Sharma ; Dharmendra Singh Yadav ; Sachin Kumar ; Nitish Parmar ; Somya Saraswat ; Atul Kumar | Novel Perspective Approach to Improve Performance of Nanowire TFET | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | web |
| 2020 | S. Kumar ; Dharmendra Singh Yadav ; S. Saraswat ; N. Parmar ; R. Sharma ; A. Kumar | A Novel Step-Channel TFET for Better Subthreshold Swing and Improved Analog/RF Characteristics | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | web |
Research Projects
| Role | Project Type | Title | Funding Agency | From | To | Amount | Status | Co-Investigator | Sanction Order | Sanction Date |
|---|
Research Supervision
| Programme Name | Scholar Name | Research Topic | Status | Year | Co-Suprivisor(s) |
|---|
Patents
| Title | Reg./Ref.No. | Date of Award/Filling | Awarding Agencies | Status |
|---|
Teaching Experience
| Position Held | Department and Organization | From | To | Total Experience |
|---|---|---|---|---|
| Assistant professor | Electronics and Communication Engineering, NIT Hamirpur, Himachal Pradesh | 10/12/2018 | Till date |
Administrative Experience
| Position Held | Department and Organization | From | To |
|---|---|---|---|
| Assistant Faculty In charge | Central Security Institute, NIT Hamirpur, Himachal Pradesh | 20/12/2018 | 03/08/2020 |
| Assistant Warden | Himadri Boys Hostel, NIT Hamirpur, Himachal Pradesh | 26/03/2019 | 01/06/2020 |
| Assistant Faculty In charge | Sports & Yoga Activities | 10/04/2019 | 03/08/2020 |
| Assistant Warden | Higiri Boys Hostel, NIT Hamirpur, Himachal Pradesh | 01/06/2020 | 03/08/2020 |
Book/Chapters Written
| Type | Title | Publisher | Author(s) | ISBN/ISSN No. | Year |
|---|
Expert Talks
| Title | Place | Year | Description of Event |
|---|
Consultancy
| Title of Consultancy | Client Organization | Faculty Involved | Amount(INR) | Status |
|---|
International and National Exposure
| Sr.No. | Title | Description |
|---|
Conferences/Courses Organized
| Category | Type | Title | Venue | From | To | Designation |
|---|---|---|---|---|---|---|
| fdp | National-NKN FDP (Sponsored by E&ICT Academy, IIT Guwahati) | Antenna Trends | National Institute of Technology Hamirpur | 01/07/2019 | 05/07/2019 | Coordinator |
| stc | National-NKN FDP (Sponsored by E&ICT Academy, IIT Roorkee) | Future Aspect of Electronics and Digital Learning | National Institute of Technology Hamirpur | 16/09/2019 | 21/09/2019 | Coordinator |
Profile Summary
Last Update: 06/10/2020 08:21pm
| Name | : | Dr. Dharmendra Singh Yadav |
| Designation | : | Assistant Professor |
| Department | : | Electronics & Communication Engineering |
| Qualification | : | B.E, M.E, Ph.D. |
| Phone | : | 01972 -254600 |
| Email ID | : | dsyadav@nith.ac.in |
| Profile URL | : | https://portfolios.nith.ac.in/index.php?/nith/dr-dharmendra-singh-yadav |
| Date of Birth | : | |
| Date of Joining | : | 10/12/2018 |
Specialization
VLSI Design
Education Qualification
| Name of the Degree | Year of Passing | Institute/University |
|---|---|---|
| B.E | 2009 | Samrat Ashok Technological Institute Vidisha M.P |
| M.E | 2011 | Shri Govindram Seksaria Institute of Technology and Science Indore M.P |
| Ph.D. (VLSI Design) | 2018 | PDPM Indian Institute of Information Technology, Design & Manufacturing Jabalpur M.P |
Teaching Experience
| Programme Name | Department And Organization | From | To | Total Experience |
|---|---|---|---|---|
| Assistant professor | Electronics and Communication Engineering, NIT Hamirpur, Himachal Pradesh | 10/12/2018 | Till date |
Administrative Experience
| Position Held | Department And Organization | From | To |
|---|---|---|---|
| Assistant Faculty In charge | Central Security Institute, NIT Hamirpur, Himachal Pradesh | 20/12/2018 | 03/08/2020 |
| Assistant Warden | Himadri Boys Hostel, NIT Hamirpur, Himachal Pradesh | 26/03/2019 | 01/06/2020 |
| Assistant Faculty In charge | Sports & Yoga Activities | 10/04/2019 | 03/08/2020 |
| Assistant Warden | Higiri Boys Hostel, NIT Hamirpur, Himachal Pradesh | 01/06/2020 | 03/08/2020 |
Research Experience
| Research Interests : | Tunnel FET, Multigate MOSFET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, Low-power MOSFET and TFETs. | |
| Brief Research Statement : | Requirement of energy efficient transistor which supports for high frequency ultra low power application. Need of smaller off-currents and standby power dissipation. Need of lesser switching delay which improves circuit level performances. Reducing supply voltage (VDD) while keeping leakage current low is one of the major concern for minimizing energy consumption. The thermal limit of MOSFET sub threshold swing (SS) restricts lowering threshold voltage (Vt), causing significant performance degradation at low VDD. Need of scaling in devices with reduced gate leakage. |
Research Projects
| Role | Project Type | Title | Funding Agency | From | To | Amount | Status | Co-Investigator | Sanction Order | Sanction Date |
|---|
Journal Publications
| Year | Author(s) | Journal Name | Title & Vol. No. | Indexing (SCI/Web of science/Scopus) |
|---|---|---|---|---|
| 2018 | D. S. Yadav, D. Sharma, S.Tirkey, D. G. sharma, S. Bajpai, D. Soni, S. Yadav, Mohd. Aslam and N. Sharma | IET, Micro Nano Letters | Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications, doi: 10.1049/mnl.2018.5075 Accepted on 11 July. 2018 | SCI |
| 2018 | D. S. Yadav, A. Verma, D. Sharma, and N. Sharma | Superlattices and Microstructures, Elsevier | Study of Metal Strip Insertion and its Optimization in Doping Less TFET. Vol. no. 122, pp. 577-586, Oct 2018 | SCI |
| 2018 | D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj | Journal of Computational Electronics, Springer | A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET vol. 17, Issue. 1, pp 118-128, Mar 2018 | SCI |
| 2017 | D. S. Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad | Superlattices and Microstructures, Elsevier | Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance vol. 111, pp. 123-133, Nov. 2017 | SCI |
| 2017 | D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj, | IET, Micro Nano Letters | Performance investigation of hetero material (InAs/Si) based charge plasma TFET vol.12, no.6, pp.358–363, Jan. 2017 | SCI |
| 2016 | D. S. Yadav, B. R. Raad, and D. Sharma | Superlattices and Microstructures, Elsevier | A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature,” vol. no. 100, pp. 266–273, Dec. 2016 | SCI |
| 2016 | D. S. Yadav, D. Sharma, B.R. Raad, V. Bajaj, | Superlattices and Microstructures, Elsevier | “Impactful Study of Dual Work Function, Underlap and Hetero Gate Dielectric on TFET with Different Drain Doping Profile for High Frequency Performance Estimation and Optimization,” vol. no. 96, pp. 36–46, Aug. 2016 | SCI |
| 2018 | S. Tirkey, D. Sharma, B. Raad, D. S. Yadav | IEEE Transaction on Electron Devices | A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field Effect Transistor" vol. 65, no.1, pp. 282-289, Jan. 2018. | SCI |
| 2017 | S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav | IEEE Transaction on Electron Devices | Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, vol. 63, no.9, pp. 3943-3950, Sep. 2017 | SCI |
| 2017 | M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav | IEEE Transaction on Electron Devices | Performance Assessment of a Novel Vertical Dielectrically Modulated TFET-Based Biosensor. vol. 63, no. 9, pp. 3841-3848, Sep. 2017 | SCI |
| 2016 | B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav | IEEE Transaction on Electron Devices | Drain work function engineered doping-Less charge plasma TFET for ambipolar suppression and RF performance improvement: A proposal design and investigation", vol. 63, no. 10, pp. 3950-3957, Oct. 2016 | SCI |
| 2016 | D. Singh, D. Sharma, S. Pandey, K. Nigam, D. S. Yadav and P. N. Kondekar | IEEE Transaction on Electron Devices | A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection. vol. 64, no. 1, pp. 271-278, Jan. 2016 | SCI |
| 2017 | S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav | Journal of computational electronics Springer | Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance,” vol. no. 16, Issue. 3, pp 714- 720 Sep. 2017. | SCI |
| 2016 | D. Sharma, B. R. Raad, D.S. Yadav, P. Kondekar, and K. Nigam | IET, Micro Nano Letters | 2-D Potential, Electric Field and Drain Current Model of Source Pocket Hetero Gate Dielectric Triple Work Function Tunnel Field-Effect Transistor. vol. 12, no. 1, pp. 11-16, Sep. 2016 | SCI |
| 2018 | A Lemtur, D Sharma, P Suman, J Patel, D S Yadav and N Sharma | Superlattices and Microstructures, Elsevier | Performance analysis of gate all around GaAsP/AlGaSb CPTFET,” vol. no. 117, pp. 364–372, Mar. 2018 | SCI |
| 2018 | S Gupta, D Sharma , D Soni , S Yadav ; M. Aslam , D S Yadav, K Nigam, N Sharma | IET, Micro Nano Letters | Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability. Vol. no. 13 , Issue: 8 pp: 1192 - 1196, 2018 | SCI |
| 2018 | M. Aslam, D Sharma, D Soni, S Yadav , B R Raad , D S Yadav , N Sharma | IET, Micro Nano Letters | Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation. Year: 2018 , Vol. no. 13 , Issue: 10 pp 1480 - 1485, 2018 | SCI |
| 2018 | S Tirkey, D S yadav, D Sharma | Applied Physics A, Springer | Controlling ambipolar current of dopingless tunnel field-effect transistor https://doi.org/10.1007/s00339-018-2237-6 | SCI |
| 2019 | D. Soni, A. K. Behra, D.Sharma, D.P.Samajdar, D.S.Yadav | Journal of Nanoelectronics and Optoelectronics | Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing.Year: 2019 , Vol. no. 14 , Issue: 11 pp 1539-1547, 2019 | SCI |
Conference Publications
| Year | Author(s) | Conference | Title | Indexing |
|---|---|---|---|---|
| 2018 | D. S. Yadav, D. Sharma, D. G. Sharma and S. Bajpai | IEEE’s 3rd International Conference for Convergence in Technology (I2CT), .sponsored by IEEE Bombay Section, held from 6th — 8th April, 2018, at Hotel Gateway (TAJ), Hinjewadi, Pune, Maharashtra , India | High Frequency Analysis of GaAsP/InSb Hetero Junction Double Gate Tunnel Field Effect Transistor | SCI |
| 2017 | D. S. Yadav, D. Sharma, S. Tirkey, D. Soni, D. G. Sharma and S. Bajpai | IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS- 2017), held from18th —20th Dec, 2017, at OIST Bhopal, India. | A Comparative Study of GaP/SiGe heterojunction double gate Tunnel Field Effect Transistor | SCI |
| 2017 | D. Soni, D. Sharma, S. Yadav, Mohd. Aslam and D. S. Yadav | IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS-2017), held from 18th—20th Dec, 2017, at OIST Bhopal, India | Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor | SCI |
| 2017 | D. S. Yadav, D. Sharma, R. Agrawal, G. Prajapati, S. Tirkey, B. R. Raad, and V. Bajaj | IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India | Temperature based performance analysis of doping-less Tunnel Field Effect Transistor | SCI |
| 2017 | S. Tirkey, D. S. Yadav, D. Sharma and V. Bajaj | IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India. | Controlling Ambipolar Behavior and Improving Radio Frequency Performance of Hetero Junction Double Gate TFET by Dual Work-Function, Hetero Gate Dielectric, Gate Underlap: Assessment and Optimization | SCI |
| 2016 | D. S. Yadav, D. Sharma, B. R. Raad and V. Bajaj | IEEE international conference on advanced communication control and computing technologies (ICACCT 2016) organized by Syed Ammal Engineering College held from 25th -27th May,2016, at Ramanathapuram, Tamilnadu, India | Dual Workfunction Hetero Gate Dielectric Tunnel Field-Effect Transistor Performance Analysis | SCI |
| 2012 | D. S. Yadav et. al | Emanthan-2012 organized by department of Electronics communication & instrumentation held at SR group of institution Jhansi (U.P), India held from 6th -7th Apr. 2012, pp. 289- 292, ISBN NO. 93-82062-18-1. | Performance evaluation of WRAN physical layer with modulation | web |
| 2011 | D. S. Yadav, A. Jain, and A. Naik | Nanoscience Engineering & Advanced Computing (ICNEAC-2011) Organized by: IACQER Advanced Research Laboratory for Nano materials & Devices, held at Swarnandhara College of engineering and technology, Narsapur (A.P) held from 8th -10th Jul. 2011, Vol. no. 01, PP.438-441 ISBN NO. 978-81-8465-683-1. | Performance Evaluation of MIMO-OFDM system | web |
| 2011 | D. S. Yadav, A. Jain, and A. Naik | Issues and challenges in networking intelligence and computing technologies (ICNICT-2011) held at Krishna college Ghaziabad (U.P) held from 1st -2nd Sept. 2011, Vol. no. 01, pp. 817-820, ISBN NO. 978-93-81126-21-1 | Performance Evaluation of OFDM system using BPSK modulation | web |
| 2012 | D. S. Yadav et. al | Prestige Abhigyan 2012- National Level Students' Paper Presentation Competition" under the aegis of Prestige-ISTE Chapter and Prestige–Indian Society for Technical Education (ISTE) Students Chapter, held at Prestige institute of engineering & science Indore (M.P) on 17th March 2012. | IEEE 802.22 wireless regional area networks | web |
| 2011 | D. S. Yadav et. al | signal processing and embedded systems applications (SPESA-2011) held at CMR college of engineering Hyderabad (A.P) on 8th -10th July 2011, Vol. no. 01, pp.158-163, ISBN NO 978-93- 81075-46-3. | MIMO-OFDM system-A review | web |
| 2011 | D. S. Yadav et. al | National Conference on Recent Trends in Electronics & Communication Technology (ECOMM-2011) held at SD- Bansal, Indore (M.P) on 8th -9th April, 2011. | OFDM system –A review | web |
| 2020 | N. Parmar ; Dharmendra Singh Yadav ; S. Kumar ; R. Sharma ; S. Saraswat ; A. Kumar | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | Performance Analysis of a Novel Dual Metal Strip Charge Plasma Tunnel FET | web |
| 2020 | S. Saraswat ; Dharmendra Singh Yadav ; S. Kumar ; N. Parmar ; R. Sharma ; Atul Kumar | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | Performance Analysis of TMG FinFETs for Low Power Application with Improved Analog/RF Characteristics | web |
| 2020 | Ritwik Sharma ; Dharmendra Singh Yadav ; Sachin Kumar ; Nitish Parmar ; Somya Saraswat ; Atul Kumar | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | Novel Perspective Approach to Improve Performance of Nanowire TFET | web |
| 2020 | S. Kumar ; Dharmendra Singh Yadav ; S. Saraswat ; N. Parmar ; R. Sharma ; A. Kumar | 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal | A Novel Step-Channel TFET for Better Subthreshold Swing and Improved Analog/RF Characteristics | web |
Book/Chapters Written
| Type (Book/Chapter) | Author(s) | Title | Publisher | ISBN/ISSN No. | Year |
|---|
Research Supersion
| Programme Name | Scholar Name | Research Topic | Status | Year | Co-Superivisor(s) |
|---|
Patents
| Name | Reg./Ref.No. | Date of Award/Filling | Awarding Agencies | Status |
|---|
Conferences/Workshop/Courses Organized
| Category | Type | Title | Venue | From | To | Designation |
|---|---|---|---|---|---|---|
| fdp | National-NKN FDP (Sponsored by E&ICT Academy, IIT Guwahati) | Antenna Trends | National Institute of Technology Hamirpur | 01/07/2019 | 05/07/2019 | Coordinator |
| stc | National-NKN FDP (Sponsored by E&ICT Academy, IIT Roorkee) | Future Aspect of Electronics and Digital Learning | National Institute of Technology Hamirpur | 16/09/2019 | 21/09/2019 | Coordinator |
Expert Talks
| Title | Place | Year | Description of Event |
|---|
Consultancy
| Title of Consultancy | Client Organization | Faculty Involved | Amount(INR) | Status |
|---|
International and National Exposure
| Sr.No. | Title | Description |
|---|---|---|
| 1 |
Honors & Recognitions Achieved
| Sr.No. | Title | Activity | Given By | Year |
|---|