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Dr. Dharmendra Singh Yadav

Assistant Professor

Dr. Dharmendra Singh Yadav received Ph.D. degree in VLSI Design Engineering from PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur Madhya Pradesh in April 2018. He received M.E degree in Electronics and Tele Communication from Shri Govindram Seksaria Institute of Technology and Science, Indore Madhya Pradesh in 2011 and B.E degree in Electronics and Communication Engineering from Samrat Ashok Technological Institute Vidisha Madhya Pradesh in 2009. He has qualified National level examination like GATE in Electronics and Communication Engineering. His research interest includes Low-power MOSFETs, Multigate MOSFET, Tunnel FET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, and Nanotechnology based thin film devices for sensing applications also FETs Based Biosensor Strain Analysis, Ferroelectrics Based FETs etc. He is also a peer reviewer and member of several reputed SCI journals/ conferences like IEEE and Scopus.

Name : Dr. Dharmendra Singh Yadav
Designation : Assistant Professor
Department : Electronics & Communication Engineering
Qualification : B.E, M.E, Ph.D.
Phone : 01972 -254600
Email ID : dsyadav@nith.ac.in
Google Scholar Link : View

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General Information



Name : Dr. Dharmendra Singh Yadav
Designation : Assistant Professor
Department : Electronics & Communication Engineering
Qualification : B.E, M.E, Ph.D.
Date of Birth :
Date of joining : 10/12/2018

Contact Details

Phone : 01972 -254600
Email ID : dsyadav@nith.ac.in

Specialization

VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device and circuits, Device Modeling: MOS Devices Modeling (Double Gate, FinFETs, Trigate etc.) and Gate-All-Around MOS Devices, Circuit Design: Ultra Low Power SRAM Memory Circuit Design using CMOS and Advanced CMOS Devices technologies.

Position Held



Position Department Name Institute Name Time Period

Educational Qualification



Name of the Degree Year of Passing Institute/University
B.E 2009 Samrat Ashok Technological Institute Vidisha M.P
M.E 2011 Shri Govindram Seksaria Institute of Technology and Science Indore M.P
Ph.D. (VLSI Design) 2018 PDPM Indian Institute of Information Technology, Design & Manufacturing Jabalpur M.P

Honors & Recognitions Achieved



Sr.No. Title Activity Given By Year

Research Experience



Research Interests : Tunnel FET, Multigate MOSFET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, Low-power MOSFET and TFETs.
Brief Research Statement : Requirement of energy efficient transistor which supports for high frequency ultra low power application. Need of smaller off-currents and standby power dissipation. Need of lesser switching delay which improves circuit level performances. Reducing supply voltage (VDD) while keeping leakage current low is one of the major concern for minimizing energy consumption. The thermal limit of MOSFET sub threshold swing (SS) restricts lowering threshold voltage (Vt), causing significant performance degradation at low VDD. Need of scaling in devices with reduced gate leakage.

Journal Publications



Year Author(s) Title & Vol. No. Journal Name Indexing (SCI) Web of Science/Scopus
2018 D. S. Yadav, D. Sharma, S.Tirkey, D. G. sharma, S. Bajpai, D. Soni, S. Yadav, Mohd. Aslam and N. Sharma Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications, doi: 10.1049/mnl.2018.5075 Accepted on 11 July. 2018 IET, Micro Nano Letters SCI
2018 D. S. Yadav, A. Verma, D. Sharma, and N. Sharma Study of Metal Strip Insertion and its Optimization in Doping Less TFET. Vol. no. 122, pp. 577-586, Oct 2018 Superlattices and Microstructures, Elsevier SCI
2018 D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET vol. 17, Issue. 1, pp 118-128, Mar 2018 Journal of Computational Electronics, Springer SCI
2017 D. S. Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance vol. 111, pp. 123-133, Nov. 2017 Superlattices and Microstructures, Elsevier SCI
2017 D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj, Performance investigation of hetero material (InAs/Si) based charge plasma TFET vol.12, no.6, pp.358–363, Jan. 2017 IET, Micro Nano Letters SCI
2016 D. S. Yadav, B. R. Raad, and D. Sharma A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature,” vol. no. 100, pp. 266–273, Dec. 2016 Superlattices and Microstructures, Elsevier SCI
2016 D. S. Yadav, D. Sharma, B.R. Raad, V. Bajaj, “Impactful Study of Dual Work Function, Underlap and Hetero Gate Dielectric on TFET with Different Drain Doping Profile for High Frequency Performance Estimation and Optimization,” vol. no. 96, pp. 36–46, Aug. 2016 Superlattices and Microstructures, Elsevier SCI
2018 S. Tirkey, D. Sharma, B. Raad, D. S. Yadav A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field Effect Transistor" vol. 65, no.1, pp. 282-289, Jan. 2018. IEEE Transaction on Electron Devices SCI
2017 S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, vol. 63, no.9, pp. 3943-3950, Sep. 2017 IEEE Transaction on Electron Devices SCI
2017 M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav Performance Assessment of a Novel Vertical Dielectrically Modulated TFET-Based Biosensor. vol. 63, no. 9, pp. 3841-3848, Sep. 2017 IEEE Transaction on Electron Devices SCI
2016 B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav Drain work function engineered doping-Less charge plasma TFET for ambipolar suppression and RF performance improvement: A proposal design and investigation", vol. 63, no. 10, pp. 3950-3957, Oct. 2016 IEEE Transaction on Electron Devices SCI
2016 D. Singh, D. Sharma, S. Pandey, K. Nigam, D. S. Yadav and P. N. Kondekar A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection. vol. 64, no. 1, pp. 271-278, Jan. 2016 IEEE Transaction on Electron Devices SCI
2017 S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance,” vol. no. 16, Issue. 3, pp 714- 720 Sep. 2017. Journal of computational electronics Springer SCI
2016 D. Sharma, B. R. Raad, D.S. Yadav, P. Kondekar, and K. Nigam 2-D Potential, Electric Field and Drain Current Model of Source Pocket Hetero Gate Dielectric Triple Work Function Tunnel Field-Effect Transistor. vol. 12, no. 1, pp. 11-16, Sep. 2016 IET, Micro Nano Letters SCI
2018 A Lemtur, D Sharma, P Suman, J Patel, D S Yadav and N Sharma Performance analysis of gate all around GaAsP/AlGaSb CPTFET,” vol. no. 117, pp. 364–372, Mar. 2018 Superlattices and Microstructures, Elsevier SCI
2018 S Gupta, D Sharma , D Soni , S Yadav ; M. Aslam , D S Yadav, K Nigam, N Sharma Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability. Vol. no. 13 , Issue: 8 pp: 1192 - 1196, 2018 IET, Micro Nano Letters SCI
2018 M. Aslam, D Sharma, D Soni, S Yadav , B R Raad , D S Yadav , N Sharma Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation. Year: 2018 , Vol. no. 13 , Issue: 10 pp 1480 - 1485, 2018 IET, Micro Nano Letters SCI
2018 S Tirkey, D S yadav, D Sharma Controlling ambipolar current of dopingless tunnel field-effect transistor https://doi.org/10.1007/s00339-018-2237-6 Applied Physics A, Springer SCI
2019 D. Soni, A. K. Behra, D.Sharma, D.P.Samajdar, D.S.Yadav Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing.Year: 2019 , Vol. no. 14 , Issue: 11 pp 1539-1547, 2019 Journal of Nanoelectronics and Optoelectronics SCI
2020 A. Lodhi, C. Rajan, A.K. Behera, D.P.Samajdar, D. Soni, Dharmendra Singh Yadav Sensitivity and sensing speed analysis of extended nano-cavity and source over electrode in Si/SiGe based TFET biosensor Applied Physics A, Springer SCI
2021 A.Dixit, D.P. Samajdar, N. Bagga, Dharmendra Singh Yadav Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric Materials Today Communications Elsevier SCI

Conference Publications



Year Author(s) Title Conference name with place Indexing (SCI/Web of science/Scopus)
2018 D. S. Yadav, D. Sharma, D. G. Sharma and S. Bajpai High Frequency Analysis of GaAsP/InSb Hetero Junction Double Gate Tunnel Field Effect Transistor IEEE’s 3rd International Conference for Convergence in Technology (I2CT), .sponsored by IEEE Bombay Section, held from 6th — 8th April, 2018, at Hotel Gateway (TAJ), Hinjewadi, Pune, Maharashtra , India SCI
2017 D. S. Yadav, D. Sharma, S. Tirkey, D. Soni, D. G. Sharma and S. Bajpai A Comparative Study of GaP/SiGe heterojunction double gate Tunnel Field Effect Transistor IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS- 2017), held from18th —20th Dec, 2017, at OIST Bhopal, India. SCI
2017 D. Soni, D. Sharma, S. Yadav, Mohd. Aslam and D. S. Yadav Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS-2017), held from 18th—20th Dec, 2017, at OIST Bhopal, India SCI
2017 D. S. Yadav, D. Sharma, R. Agrawal, G. Prajapati, S. Tirkey, B. R. Raad, and V. Bajaj Temperature based performance analysis of doping-less Tunnel Field Effect Transistor IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India SCI
2017 S. Tirkey, D. S. Yadav, D. Sharma and V. Bajaj Controlling Ambipolar Behavior and Improving Radio Frequency Performance of Hetero Junction Double Gate TFET by Dual Work-Function, Hetero Gate Dielectric, Gate Underlap: Assessment and Optimization IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India. SCI
2016 D. S. Yadav, D. Sharma, B. R. Raad and V. Bajaj Dual Workfunction Hetero Gate Dielectric Tunnel Field-Effect Transistor Performance Analysis IEEE international conference on advanced communication control and computing technologies (ICACCT 2016) organized by Syed Ammal Engineering College held from 25th -27th May,2016, at Ramanathapuram, Tamilnadu, India SCI
2020 Nitesh Parmar ; Dharmendra Singh Yadav ; S. Kumar ; R. Sharma ; S. Saraswat ; A. Kumar Performance Analysis of a Novel Dual Metal Strip Charge Plasma Tunnel FET 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal SCI
2020 Somya Saraswat ; Dharmendra Singh Yadav ; S. Kumar ; N. Parmar ; R. Sharma ; Atul Kumar Performance Analysis of TMG FinFETs for Low Power Application with Improved Analog/RF Characteristics 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal SCI
2020 Ritwik Sharma ; Dharmendra Singh Yadav ; Sachin Kumar ; Nitish Parmar ; Somya Saraswat ; Atul Kumar Novel Perspective Approach to Improve Performance of Nanowire TFET 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal SCI
2020 Sachin Kumar ; Dharmendra Singh Yadav ; S. Saraswat ; N. Parmar ; R. Sharma ; A. Kumar A Novel Step-Channel TFET for Better Subthreshold Swing and Improved Analog/RF Characteristics 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal SCI
2021 Prabhat Singh, Dharmendra Singh Yadav.et.al Doping and Dopingless Tunnel Field Effect Transistor IEEE, 2021 6th International Conference for Convergence in Technology (I2CT), 2021 SCI
2021 Prabhat Singh, Dharmendra Singh Yadav.et.al A Low Power Single Gate L-shaped TFET for High Frequency Application IEEE, 2021 6th International Conference for Convergence in Technology (I2CT), 2021 SCI
2021 Manshi Kamal, Dharmendra Singh Yadav A Comparative Analysis with Impact of Work Function Engineering of Step Channel TFET Springer, 4th International Conference on Inventive Material Science and Applications (ICIMA- 2021) SCI
2021 Prince Kumar Pandey, Dharmendra Singh Yadav Parametric Inspection of 6T SRAM Cell IEEE, 5th International Conference on Trends in Electronics and Informatics (ICOEI 2021) SCI

Research Projects



Role Project Type Title Funding Agency From To Amount Status Co-Investigator Sanction Order Sanction Date

Research Supervision



Programme Name Scholar Name Research Topic Status Year Co-Suprivisor(s)
M.Tech Somya Saraswat Performance Analysis of Tri-Metal Gate (TMG) FinFETs for low power applications Completed 2020 -
M.Tech Nitesh Parmar Charge Plasma Tunnel FET: Proposal, Design and Investigation Completed 2020 -
M.Tech Sachin Kumar Impactful Study of TFET for High Frequency Performance Estimation and Optimization Completed 2020 -
M.Tech Ritwik Sharma Comprehensive Study of Nanowire Tunnel Field Effect Transistor Completed 2020 -
M.Tech Prince Kumar Pandey Parametric Analysis of Different SRAM Cells and Designing 4x4 Array Completed 2021 -
M.Tech Manshi Kamal Analysis of Analog/RF and Linearity Performance for Step Channel Tunnel Field Effect Transistor Completed 2021 -
M.Tech Sangeeta Pandey Design and performance estimation of 12T SRAM cell on CMOS technology with stability analysis Completed 2021 -
Ph.D Prabhat Singh Design and investigation of Tunnel FET for low power based circuit application Ongoing 2019 -

Patents



Title Reg./Ref.No. Date of Award/Filling Awarding Agencies Status

Teaching Experience



Position Held Department and Organization From To Total Experience
Assistant professor Electronics and Communication Engineering, NIT Hamirpur, Himachal Pradesh 10/12/2018 Till date

Administrative Experience



Position Held Department and Organization From To
Assistant Faculty In charge Central Security Institute, NIT Hamirpur, Himachal Pradesh 20/12/2018 03/08/2020
Assistant Warden Himadri Boys Hostel, NIT Hamirpur, Himachal Pradesh 26/03/2019 01/06/2020
Assistant Faculty In charge Sports & Yoga Activities 10/04/2019 03/08/2020
Assistant Warden Higiri Boys Hostel, NIT Hamirpur, Himachal Pradesh 01/06/2020 03/08/2020

Book/Chapters Written



Type Title Publisher Author(s) ISBN/ISSN No. Year

Expert Talks



Title Place Year Description of Event

Consultancy



Title of Consultancy Client Organization Faculty Involved Amount(INR) Status

International and National Exposure



Sr.No. Title Description

Conferences/Courses Organized



Category Type Title Venue From To Designation
fdp National-NKN FDP (Sponsored by E&ICT Academy, IIT Guwahati) Antenna Trends National Institute of Technology Hamirpur 01/07/2019 05/07/2019 Coordinator
stc National-NKN FDP (Sponsored by E&ICT Academy, IIT Roorkee) Future Aspect of Electronics and Digital Learning National Institute of Technology Hamirpur 16/09/2019 21/09/2019 Coordinator

Profile Summary

Last Update: 04/10/2021 04:12pm
Logo
Name : Dr. Dharmendra Singh Yadav
Designation : Assistant Professor
Department : Electronics & Communication Engineering
Qualification : B.E, M.E, Ph.D.
Phone : 01972 -254600
Email ID : dsyadav@nith.ac.in
Profile URL : https://portfolios.nith.ac.in/index.php?/nith/dr-dharmendra-singh-yadav
Date of Birth :
Date of Joining : 10/12/2018

Specialization

VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device and circuits, Device Modeling: MOS Devices Modeling (Double Gate, FinFETs, Trigate etc.) and Gate-All-Around MOS Devices, Circuit Design: Ultra Low Power SRAM Memory Circuit Design using CMOS and Advanced CMOS Devices technologies.

Education Qualification


Name of the Degree Year of Passing Institute/University
B.E 2009 Samrat Ashok Technological Institute Vidisha M.P
M.E 2011 Shri Govindram Seksaria Institute of Technology and Science Indore M.P
Ph.D. (VLSI Design) 2018 PDPM Indian Institute of Information Technology, Design & Manufacturing Jabalpur M.P

Teaching Experience


Programme Name Department And Organization From To Total Experience
Assistant professor Electronics and Communication Engineering, NIT Hamirpur, Himachal Pradesh 10/12/2018 Till date

Administrative Experience


Position Held Department And Organization From To
Assistant Faculty In charge Central Security Institute, NIT Hamirpur, Himachal Pradesh 20/12/2018 03/08/2020
Assistant Warden Himadri Boys Hostel, NIT Hamirpur, Himachal Pradesh 26/03/2019 01/06/2020
Assistant Faculty In charge Sports & Yoga Activities 10/04/2019 03/08/2020
Assistant Warden Higiri Boys Hostel, NIT Hamirpur, Himachal Pradesh 01/06/2020 03/08/2020

Research Experience

Research Interests : Tunnel FET, Multigate MOSFET, Solid-State Devices, Semiconductor Devices: Physics, Simulation and modelling of nanoscale devices for low power and high frequency applications, Circuit level implementation of devices in nanoelectronics, Low-power MOSFET and TFETs.
Brief Research Statement : Requirement of energy efficient transistor which supports for high frequency ultra low power application. Need of smaller off-currents and standby power dissipation. Need of lesser switching delay which improves circuit level performances. Reducing supply voltage (VDD) while keeping leakage current low is one of the major concern for minimizing energy consumption. The thermal limit of MOSFET sub threshold swing (SS) restricts lowering threshold voltage (Vt), causing significant performance degradation at low VDD. Need of scaling in devices with reduced gate leakage.

Research Projects


Role Project Type Title Funding Agency From To Amount Status Co-Investigator Sanction OrderSanction Date

Journal Publications


Year Author(s) Journal Name Title & Vol. No. Indexing (SCI/Web of science/Scopus)
2018 D. S. Yadav, D. Sharma, S.Tirkey, D. G. sharma, S. Bajpai, D. Soni, S. Yadav, Mohd. Aslam and N. Sharma IET, Micro Nano Letters Hetero-material CPTFET with high-frequency and linearity analysis for ultra-low power applications, doi: 10.1049/mnl.2018.5075 Accepted on 11 July. 2018 SCI
2018 D. S. Yadav, A. Verma, D. Sharma, and N. Sharma Superlattices and Microstructures, Elsevier Study of Metal Strip Insertion and its Optimization in Doping Less TFET. Vol. no. 122, pp. 577-586, Oct 2018 SCI
2018 D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj Journal of Computational Electronics, Springer A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET vol. 17, Issue. 1, pp 118-128, Mar 2018 SCI
2017 D. S. Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad Superlattices and Microstructures, Elsevier Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance vol. 111, pp. 123-133, Nov. 2017 SCI
2017 D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj, IET, Micro Nano Letters Performance investigation of hetero material (InAs/Si) based charge plasma TFET vol.12, no.6, pp.358–363, Jan. 2017 SCI
2016 D. S. Yadav, B. R. Raad, and D. Sharma Superlattices and Microstructures, Elsevier A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature,” vol. no. 100, pp. 266–273, Dec. 2016 SCI
2016 D. S. Yadav, D. Sharma, B.R. Raad, V. Bajaj, Superlattices and Microstructures, Elsevier “Impactful Study of Dual Work Function, Underlap and Hetero Gate Dielectric on TFET with Different Drain Doping Profile for High Frequency Performance Estimation and Optimization,” vol. no. 96, pp. 36–46, Aug. 2016 SCI
2018 S. Tirkey, D. Sharma, B. Raad, D. S. Yadav IEEE Transaction on Electron Devices A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field Effect Transistor" vol. 65, no.1, pp. 282-289, Jan. 2018. SCI
2017 S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav IEEE Transaction on Electron Devices Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, vol. 63, no.9, pp. 3943-3950, Sep. 2017 SCI
2017 M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav IEEE Transaction on Electron Devices Performance Assessment of a Novel Vertical Dielectrically Modulated TFET-Based Biosensor. vol. 63, no. 9, pp. 3841-3848, Sep. 2017 SCI
2016 B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav IEEE Transaction on Electron Devices Drain work function engineered doping-Less charge plasma TFET for ambipolar suppression and RF performance improvement: A proposal design and investigation", vol. 63, no. 10, pp. 3950-3957, Oct. 2016 SCI
2016 D. Singh, D. Sharma, S. Pandey, K. Nigam, D. S. Yadav and P. N. Kondekar IEEE Transaction on Electron Devices A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection. vol. 64, no. 1, pp. 271-278, Jan. 2016 SCI
2017 S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav Journal of computational electronics Springer Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance,” vol. no. 16, Issue. 3, pp 714- 720 Sep. 2017. SCI
2016 D. Sharma, B. R. Raad, D.S. Yadav, P. Kondekar, and K. Nigam IET, Micro Nano Letters 2-D Potential, Electric Field and Drain Current Model of Source Pocket Hetero Gate Dielectric Triple Work Function Tunnel Field-Effect Transistor. vol. 12, no. 1, pp. 11-16, Sep. 2016 SCI
2018 A Lemtur, D Sharma, P Suman, J Patel, D S Yadav and N Sharma Superlattices and Microstructures, Elsevier Performance analysis of gate all around GaAsP/AlGaSb CPTFET,” vol. no. 117, pp. 364–372, Mar. 2018 SCI
2018 S Gupta, D Sharma , D Soni , S Yadav ; M. Aslam , D S Yadav, K Nigam, N Sharma IET, Micro Nano Letters Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability. Vol. no. 13 , Issue: 8 pp: 1192 - 1196, 2018 SCI
2018 M. Aslam, D Sharma, D Soni, S Yadav , B R Raad , D S Yadav , N Sharma IET, Micro Nano Letters Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation. Year: 2018 , Vol. no. 13 , Issue: 10 pp 1480 - 1485, 2018 SCI
2018 S Tirkey, D S yadav, D Sharma Applied Physics A, Springer Controlling ambipolar current of dopingless tunnel field-effect transistor https://doi.org/10.1007/s00339-018-2237-6 SCI
2019 D. Soni, A. K. Behra, D.Sharma, D.P.Samajdar, D.S.Yadav Journal of Nanoelectronics and Optoelectronics Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing.Year: 2019 , Vol. no. 14 , Issue: 11 pp 1539-1547, 2019 SCI
2020 A. Lodhi, C. Rajan, A.K. Behera, D.P.Samajdar, D. Soni, Dharmendra Singh Yadav Applied Physics A, Springer Sensitivity and sensing speed analysis of extended nano-cavity and source over electrode in Si/SiGe based TFET biosensor SCI
2021 A.Dixit, D.P. Samajdar, N. Bagga, Dharmendra Singh Yadav Materials Today Communications Elsevier Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric SCI

Conference Publications


Year Author(s) Conference Title Indexing
2018 D. S. Yadav, D. Sharma, D. G. Sharma and S. Bajpai IEEE’s 3rd International Conference for Convergence in Technology (I2CT), .sponsored by IEEE Bombay Section, held from 6th — 8th April, 2018, at Hotel Gateway (TAJ), Hinjewadi, Pune, Maharashtra , India High Frequency Analysis of GaAsP/InSb Hetero Junction Double Gate Tunnel Field Effect Transistor SCI
2017 D. S. Yadav, D. Sharma, S. Tirkey, D. Soni, D. G. Sharma and S. Bajpai IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS- 2017), held from18th —20th Dec, 2017, at OIST Bhopal, India. A Comparative Study of GaP/SiGe heterojunction double gate Tunnel Field Effect Transistor SCI
2017 D. Soni, D. Sharma, S. Yadav, Mohd. Aslam and D. S. Yadav IEEE International Symposium on Nanoelectronics and Information Systems (IEEE iNIS-2017), held from 18th—20th Dec, 2017, at OIST Bhopal, India Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor SCI
2017 D. S. Yadav, D. Sharma, R. Agrawal, G. Prajapati, S. Tirkey, B. R. Raad, and V. Bajaj IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India Temperature based performance analysis of doping-less Tunnel Field Effect Transistor SCI
2017 S. Tirkey, D. S. Yadav, D. Sharma and V. Bajaj IEEE International Conference on Information Communication Instrumentation and Control (ICICIC -2017), held from 17th -19th Aug, 2017, at Medi-caps University Indore India. Controlling Ambipolar Behavior and Improving Radio Frequency Performance of Hetero Junction Double Gate TFET by Dual Work-Function, Hetero Gate Dielectric, Gate Underlap: Assessment and Optimization SCI
2016 D. S. Yadav, D. Sharma, B. R. Raad and V. Bajaj IEEE international conference on advanced communication control and computing technologies (ICACCT 2016) organized by Syed Ammal Engineering College held from 25th -27th May,2016, at Ramanathapuram, Tamilnadu, India Dual Workfunction Hetero Gate Dielectric Tunnel Field-Effect Transistor Performance Analysis SCI
2020 Nitesh Parmar ; Dharmendra Singh Yadav ; S. Kumar ; R. Sharma ; S. Saraswat ; A. Kumar 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal Performance Analysis of a Novel Dual Metal Strip Charge Plasma Tunnel FET SCI
2020 Somya Saraswat ; Dharmendra Singh Yadav ; S. Kumar ; N. Parmar ; R. Sharma ; Atul Kumar 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal Performance Analysis of TMG FinFETs for Low Power Application with Improved Analog/RF Characteristics SCI
2020 Ritwik Sharma ; Dharmendra Singh Yadav ; Sachin Kumar ; Nitish Parmar ; Somya Saraswat ; Atul Kumar 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal Novel Perspective Approach to Improve Performance of Nanowire TFET SCI
2020 Sachin Kumar ; Dharmendra Singh Yadav ; S. Saraswat ; N. Parmar ; R. Sharma ; A. Kumar 2020 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) held at MANIT Bhopal A Novel Step-Channel TFET for Better Subthreshold Swing and Improved Analog/RF Characteristics SCI
2021 Prabhat Singh, Dharmendra Singh Yadav.et.al IEEE, 2021 6th International Conference for Convergence in Technology (I2CT), 2021 Doping and Dopingless Tunnel Field Effect Transistor SCI
2021 Prabhat Singh, Dharmendra Singh Yadav.et.al IEEE, 2021 6th International Conference for Convergence in Technology (I2CT), 2021 A Low Power Single Gate L-shaped TFET for High Frequency Application SCI
2021 Manshi Kamal, Dharmendra Singh Yadav Springer, 4th International Conference on Inventive Material Science and Applications (ICIMA- 2021) A Comparative Analysis with Impact of Work Function Engineering of Step Channel TFET SCI
2021 Prince Kumar Pandey, Dharmendra Singh Yadav IEEE, 5th International Conference on Trends in Electronics and Informatics (ICOEI 2021) Parametric Inspection of 6T SRAM Cell SCI

Book/Chapters Written


Type (Book/Chapter) Author(s) Title Publisher ISBN/ISSN No. Year

Research Supersion


Programme Name Scholar Name Research Topic Status Year Co-Superivisor(s)
M.Tech Somya Saraswat Performance Analysis of Tri-Metal Gate (TMG) FinFETs for low power applications Completed 2020 -
M.Tech Nitesh Parmar Charge Plasma Tunnel FET: Proposal, Design and Investigation Completed 2020 -
M.Tech Sachin Kumar Impactful Study of TFET for High Frequency Performance Estimation and Optimization Completed 2020 -
M.Tech Ritwik Sharma Comprehensive Study of Nanowire Tunnel Field Effect Transistor Completed 2020 -
M.Tech Prince Kumar Pandey Parametric Analysis of Different SRAM Cells and Designing 4x4 Array Completed 2021 -
M.Tech Manshi Kamal Analysis of Analog/RF and Linearity Performance for Step Channel Tunnel Field Effect Transistor Completed 2021 -
M.Tech Sangeeta Pandey Design and performance estimation of 12T SRAM cell on CMOS technology with stability analysis Completed 2021 -
Ph.D Prabhat Singh Design and investigation of Tunnel FET for low power based circuit application Ongoing 2019 -

Patents


Name Reg./Ref.No. Date of Award/Filling Awarding Agencies Status

Conferences/Workshop/Courses Organized


Category Type Title Venue From To Designation
fdp National-NKN FDP (Sponsored by E&ICT Academy, IIT Guwahati) Antenna Trends National Institute of Technology Hamirpur 01/07/2019 05/07/2019 Coordinator
stc National-NKN FDP (Sponsored by E&ICT Academy, IIT Roorkee) Future Aspect of Electronics and Digital Learning National Institute of Technology Hamirpur 16/09/2019 21/09/2019 Coordinator

Expert Talks


Title Place Year Description of Event

Consultancy


Title of Consultancy Client Organization Faculty Involved Amount(INR) Status

International and National Exposure


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Honors & Recognitions Achieved


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